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APT50GF120LRG - Microsemi Corporation

Description: IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single

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PCB Footprints
APT50GF120LRG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264(L)
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3D Models
APT50GF120LRG - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-264(L)
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APT50GF120LRG Details

  • Manufacturer Part Number:

    APT50GF120LRG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-264AA

  • Package Description:

    ROHS COMPLIANT, TO-264, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    156 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    781 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    520 ns

  • Turn-on Time-Nom (ton):

    106 ns

APT50GF120LRG Frequently Asked Questions (FAQs)

  • Microsemi recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal pad on the top layer connected to the heat sink. Ensure a minimum of 1 oz copper thickness and use thermal vias to dissipate heat efficiently.
  • Implement a heat sink with a thermal resistance of ≤ 1°C/W, and ensure good airflow around the device. Also, consider derating the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • Use a gate driver with a high current capability (e.g., ≥ 2A) and a low output impedance. Choose gate resistors with a value between 10 Ω to 22 Ω, and ensure the gate voltage is within the recommended range (15 V to 20 V).
  • Implement a voltage clamp or a transient voltage suppressor (TVS) to protect against overvoltage. Use a current sense resistor and a fast-acting fuse or a current limiter to prevent overcurrent conditions.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and ensure the device is stored in an ESD-protective package when not in use.

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Part Image APT50GF120LR Microchip Technology Inc

Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel, TO-264AA