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APTGTQ200DA65T3G - Microsemi Corporation

Description: IGBT Power Module

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APTGTQ200DA65T3G - Microsemi Corporation  - 3D model
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APTGTQ200DA65T3G Details

  • Manufacturer Part Number:

    APTGTQ200DA65T3G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    MODULE-25

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-05-27

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    200 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    4.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X25

  • Number of Elements:

    1

  • Number of Terminals:

    25

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    483 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    231 ns

  • Turn-on Time-Nom (ton):

    35 ns

  • VCEsat-Max:

    2.2 V

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APTGTQ200DA65T3G Overview

Use the download button to access the APTGTQ200DA65T3G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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