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AS4C32M16D3-12BCN - Alliance Memory

Description: DRAM 512M 1.5V 800Mhz 32M x 16 DDR3

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AS4C32M16D3-12BCN - Alliance Memory PCB footprint - BGA - BGA - 96-Ball FBGA Package 8x13x1.0mm(max)
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AS4C32M16D3-12BCN - Alliance Memory  - 3D model - BGA - 96-Ball FBGA Package 8x13x1.0mm(max)
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AS4C32M16D3-12BCN Details

  • Manufacturer Part Number:

    AS4C32M16D3-12BCN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.28

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2017-09-29

  • Manufacturer:

    Alliance Memory Inc

  • YTEOL:

    4

  • Access Mode:

    MULTI BANK PAGE BURST

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    800 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    DDR3 DRAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    33554432 words

  • Number of Words Code:

    32000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    32MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.012 A

  • Standby Voltage-Min:

    1.425 V

  • Supply Current-Max:

    0.195 mA

  • Supply Voltage-Max (Vsup):

    1.575 V

  • Supply Voltage-Min (Vsup):

    1.425 V

  • Supply Voltage-Nom (Vsup):

    1.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    8 mm

AS4C32M16D3-12BCN Frequently Asked Questions (FAQs)

  • The AS4C32M16D3-12BCN has an operating temperature range of 0°C to 70°C.
  • The SDRAM requires a power-on reset sequence, which involves applying a clock signal, then asserting the chip select (CS) and clock enable (CKE) signals, and finally, issuing a NOP (no operation) command.
  • The AS4C32M16D3-12BCN has a latency of 3 clock cycles (CL3).
  • The AS4C32M16D3-12BCN is designed to operate at a voltage supply of 3.3V ± 0.3V. Using it with a different voltage supply may affect its performance and reliability.
  • The AS4C32M16D3-12BCN requires periodic refresh cycles to maintain data integrity. The refresh interval is typically 64ms, and the refresh command should be issued every 15.6μs.

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