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AS4C512M16D3LC-12BCN - Alliance Memory

Description: DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-BALL FBGA, 800MHZ COMMERCIAL TEMP (MT41K512M16HA-125:A)

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AS4C512M16D3LC-12BCN - Alliance Memory PCB footprint - BGA - BGA - 96-Ball BGA Package 9x13x1.2mm(max)
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AS4C512M16D3LC-12BCN - Alliance Memory  - 3D model - BGA - 96-Ball BGA Package 9x13x1.2mm(max)
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AS4C512M16D3LC-12BCN Details

  • Manufacturer Part Number:

    AS4C512M16D3LC-12BCN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FBGA-96

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Alliance Memory Inc

  • YTEOL:

    4

  • Access Mode:

    MULTI BANK PAGE BURST

  • Clock Frequency-Max (fCLK):

    800 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    8589934592 bit

  • Memory IC Type:

    DDR3L DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    512MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.016 A

  • Supply Current-Max:

    0.35 mA

  • Supply Voltage-Max (Vsup):

    1.45 V

  • Supply Voltage-Min (Vsup):

    1.283 V

  • Supply Voltage-Nom (Vsup):

    1.35 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    9 mm

AS4C512M16D3LC-12BCN Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AS4C512M16D3LC-12BCN is 0°C to 70°C (commercial grade) and -40°C to 85°C (industrial grade).
  • The AS4C512M16D3LC-12BCN requires a refresh cycle every 64ms (tREF) to maintain data integrity. You can use a refresh counter to keep track of the refresh cycles and issue an Auto Refresh command (ARF) to the SDRAM.
  • The minimum clock cycle time for the AS4C512M16D3LC-12BCN is 12ns (tCK), which corresponds to a clock frequency of 83.33MHz.
  • The AS4C512M16D3LC-12BCN is designed to operate at a voltage supply of 3.3V (VDD) and 2.5V (VDDQ). Using a different voltage supply may affect the performance and reliability of the SDRAM.
  • During power-up, the SDRAM requires a minimum of 200us delay after VDD reaches 2.2V before applying clock signals. During power-down, the SDRAM requires a minimum of 200us delay after clock signals are stopped before VDD reaches 0V.

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