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AS4C8M16D1-5BIN - Alliance Memory

Description: DRAM

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PCB Footprints
AS4C8M16D1-5BIN - Alliance Memory PCB footprint - BGA - BGA - BGA 60ball
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3D Models
AS4C8M16D1-5BIN - Alliance Memory  - 3D model - BGA - BGA 60ball
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AS4C8M16D1-5BIN Details

  • Manufacturer Part Number:

    AS4C8M16D1-5BIN

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FBGA-60

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.02

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Alliance Memory Inc

  • YTEOL:

    4

  • Access Mode:

    FOUR BANK PAGE BURST

  • Access Time-Max:

    0.7 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    200 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    2,4,8

  • JESD-30 Code:

    R-PBGA-B60

  • Length:

    13 mm

  • Memory Density:

    134217728 bit

  • Memory IC Type:

    DDR1 DRAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    60

  • Number of Words:

    8388608 words

  • Number of Words Code:

    8000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Equivalence Code:

    BGA60,9X12,40/32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Refresh Cycles:

    4096

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    2,4,8

  • Standby Current-Max:

    0.005 A

  • Standby Voltage-Min:

    2.3 V

  • Supply Current-Max:

    0.14 mA

  • Supply Voltage-Max (Vsup):

    2.7 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    2.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Width:

    8 mm

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AS4C8M16D1-5BIN Overview

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Part Image AS4C8M16D1-5BINTR Alliance Memory Inc

DDR1 DRAM, 8MX16, 0.7ns, CMOS, PBGA60