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AT45DB081E-MHN-T - Adesto Technologies

Description: IC FLASH 8MBIT SPI 85MHZ 8UDFN

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AT45DB081E-MHN-T - Adesto Technologies PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1
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AT45DB081E-MHN-T - Adesto Technologies  - 3D model - Small Outline No-lead - 8MA1
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AT45DB081E-MHN-T Details

  • Manufacturer Part Number:

    AT45DB081E-MHN-T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    UDFN-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Adesto Technologies Corporation

  • Clock Frequency-Max (fCLK):

    85 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    8388608 words

  • Number of Words Code:

    8000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8MX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    2.7 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    0.6 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.000001 A

  • Supply Current-Max:

    0.016 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB081E-MHN-T Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB081E-MHN-T is 2.7V to 3.6V.
  • The AT45DB081E-MHN-T has a 128-byte page buffer. To handle page buffer management, you need to write data to the page buffer using the Page Buffer Write command, and then commit the data to the flash memory using the Page Program command.
  • The AT45DB081E-MHN-T has an erase cycle endurance of 100,000 cycles.
  • Wear leveling can be implemented by dynamically allocating data to different blocks of the flash memory, and periodically moving data to less worn blocks. This can be done using a combination of hardware and software techniques.
  • The data retention period of the AT45DB081E-MHN-T is 20 years at 25°C, and 10 years at 85°C.

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