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AT45DB641E-MHN-Y - Adesto Technologies

Description: ADESTO TECHNOLOGIES - AT45DB641E-MHN-Y - MEMORY, SERIAL FLASH, 64MBIT, UDFN-8

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AT45DB641E-MHN-Y - Adesto Technologies PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1
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AT45DB641E-MHN-Y - Adesto Technologies  - 3D model - Small Outline No-lead - 8MA1
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AT45DB641E-MHN-Y Details

  • Manufacturer Part Number:

    AT45DB641E-MHN-Y

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    SON

  • Package Description:

    UDFN-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Adesto Technologies Corporation

  • Clock Frequency-Max (fCLK):

    85 MHz

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.6 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    2.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    5 mm

AT45DB641E-MHN-Y Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB641E-MHN-Y is 2.7V to 3.6V.
  • The AT45DB641E-MHN-Y has a 128-byte page buffer. To handle page buffer management, you need to follow the protocol outlined in the datasheet, which involves loading the page buffer with data, performing a buffer-to-flash transfer, and then verifying the data.
  • The WP# (Write Protect) pin is used to prevent accidental writes to the device. When the WP# pin is low, the device is in a protected state, and any attempts to write to the device will be ignored.
  • To perform a sector erase on the AT45DB641E-MHN-Y, you need to send the appropriate command sequence to the device, which includes the erase setup command, the sector address, and the erase confirm command.
  • The AT45DB641E-MHN-Y has a maximum of 100,000 erase cycles per sector.

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