AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Avalanche Energy Rating (Eas):
83 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
36 A
Drain-source On Resistance-Max:
0.0265 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
92 W
Pulsed Drain Current-Max (IDM):
140 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
AUIRF540Z Frequently Asked Questions (FAQs)
The maximum operating temperature range for the AUIRF540Z is -55°C to 175°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing conditions are Vgs = 10V, Vds = 50V, and Id = 10A.
The maximum current rating for the AUIRF540Z is 40A.
To protect the AUIRF540Z from overvoltage and overcurrent, use a voltage regulator to limit the voltage to 50V or less, and use a current sense resistor to monitor the current and trigger a shutdown circuit if the current exceeds 40A.
The thermal resistance of the AUIRF540Z is RthJA = 40 K/W and RthJC = 2.5 K/W.
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Community Provided
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System Verified
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Community Approved
Sponsored
AUIRF540Z Overview
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