AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
220 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
75 A
Drain-source On Resistance-Max:
0.01 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
200 W
Pulsed Drain Current-Max (IDM):
380 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
AUIRFB4410 Frequently Asked Questions (FAQs)
The maximum junction temperature (Tj) of the AUIRFB4410 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
To calculate the power dissipation of the AUIRFB4410, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
The recommended gate drive voltage for the AUIRFB4410 is between 10V and 15V. However, the gate drive voltage should be adjusted based on the specific application requirements and the desired switching frequency.
Yes, the AUIRFB4410 is suitable for high-frequency switching applications up to 1 MHz. However, the device's performance and reliability may degrade at higher frequencies. It's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive circuitry to ensure reliable operation.
To ensure proper cooling of the AUIRFB4410, you should consider the thermal resistance of the device, the PCB layout, and the heat sink design. A heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure that the device is mounted correctly, and the thermal interface material is applied properly to minimize thermal resistance.
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AUIRFB4410 Overview
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