Part Image

IRFB4410PBF - Infineon

Description: MOSFET N-Channel 100V 88A TO220AB Infineon IRFB4410PBF N-channel MOSFET Transistor, 88 A, 100 V, 3-Pin TO-220AB

Download IRFB4410PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFB4410PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB_3
click to zoom
3D Models
IRFB4410PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO220AB_3
click to zoom

IRFB4410PBF Details

  • Manufacturer Part Number:

    IRFB4410PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    190 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    380 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB4410PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB4410PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFB4410PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB4410PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFB4410PBF Overview

Use the download button to access the IRFB4410PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFB4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFB4410PBF

Showing 0 results

IRFB4410PBF Alternates

Showing results

Image Part Number Model
Part Image IRFB4410PBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRFB4410 Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB