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AUIRLU2905 - Infineon

Description: MOSFET N-Ch 55V 42A Logic HEXFET IPAK International Rectifier AUIRLU2905 N-channel MOSFET Transistor, 42 A, 55 V, 3-Pin TO-252

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AUIRLU2905 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - AUIRLU2905
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AUIRLU2905 - Infineon  - 3D model - Transistor Outline, Vertical - AUIRLU2905
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AUIRLU2905 Details

  • Manufacturer Part Number:

    AUIRLU2905

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRLU2905 Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via under the device are also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The AUIRLU2905 has an integrated ESD protection circuit, but it's still recommended to follow standard ESD handling precautions during assembly and handling. Additionally, consider adding external ESD protection devices if the application requires it.
  • Yes, the AUIRLU2905 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • The gate resistor value depends on the specific application requirements, such as the switching frequency, gate drive voltage, and PCB layout. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω. Consult the datasheet and application notes for more detailed guidance.

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