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BC807UE6327HTSA1 - Infineon

Description: Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR ARRAY

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PCB Footprints
BC807UE6327HTSA1 - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - MS-001-BB ISSUE D
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3D Models
BC807UE6327HTSA1 - Infineon  - 3D model - SOT23 (6-Pin) - MS-001-BB ISSUE D
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BC807UE6327HTSA1 Details

  • Manufacturer Part Number:

    BC807UE6327HTSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    PNP

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

BC807UE6327HTSA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BC807UE6327HTSA1 is a QFN-32 package with a 5x5mm body size and 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance. Additionally, the device should be operated within its specified temperature range of -40°C to 150°C.
  • The BC807UE6327HTSA1 has built-in ESD protection, but it is still recommended to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD pulses up to 2kV according to the Human Body Model (HBM) and 250V according to the Machine Model (MM).
  • Yes, the BC807UE6327HTSA1 is suitable for use in battery-powered devices due to its low power consumption and low standby current. However, it is recommended to follow proper power management and low-power design techniques to minimize power consumption and extend battery life.
  • To troubleshoot issues with the BC807UE6327HTSA1, it is recommended to follow a systematic approach, including checking the device's operating conditions, verifying the PCB layout and design, and using debugging tools such as oscilloscopes and logic analyzers. Additionally, consulting the datasheet and application notes can provide valuable insights and troubleshooting guidance.

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BC807UE6327HTSA1 Overview

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Part Image BC807U Infineon Technologies AG

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon