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BC847CT116 - ROHM Semiconductor

Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 200MHz 350 mW Surface Mount SST3 , -55℃ to +150℃

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PCB Footprints
BC847CT116 - ROHM Semiconductor PCB footprint - Other - Other - SST3_2026-1.3
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BC847CT116 - ROHM Semiconductor  - 3D model - Other - SST3_2026-1.3
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BC847CT116 Details

  • Manufacturer Part Number:

    BC847CT116

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    3 pF

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    420

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.3 V

BC847CT116 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BC847CT116 is -55°C to 150°C, although the datasheet only specifies a storage temperature range of -55°C to 150°C.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal design, and consider using a heat sink if necessary. Additionally, ROHM Semiconductor provides a reliability report that can be requested from their sales team or website.
  • The maximum allowable power dissipation for the BC847CT116 is dependent on the ambient temperature and the thermal resistance of the package. According to the datasheet, the maximum power dissipation is 250mW at an ambient temperature of 25°C. However, this value can be derated based on the actual operating temperature and thermal design.
  • While the BC847CT116 is a general-purpose transistor, it's not ideal for high-frequency switching applications due to its relatively high transition frequency (ft) of 100MHz. For switching applications, a transistor with a higher ft and lower capacitance would be more suitable.
  • ROHM Semiconductor recommends following proper ESD handling procedures when working with the BC847CT116, including using an ESD wrist strap, mat, or workstation, and ensuring that all equipment and tools are properly grounded. Additionally, the BC847CT116 has a human body model (HBM) ESD rating of 2kV, which provides some level of protection against ESD events.

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Part Image BC847CT216 ROHM Semiconductor

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon