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BC858CDXV6T1G - onsemi

Description: These are Pb-Free Devices

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BC858CDXV6T1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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BC858CDXV6T1G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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BC858CDXV6T1G Details

  • Manufacturer Part Number:

    BC858CDXV6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    420

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

BC858CDXV6T1G Frequently Asked Questions (FAQs)

  • The maximum input voltage is 18V, but it's recommended to keep it below 15V for optimal performance and to prevent overheating.
  • To ensure stability, use a minimum output capacitance of 10uF with an ESR (Equivalent Series Resistance) of 1Ω or less, and a minimum input capacitance of 1uF with an ESR of 1Ω or less.
  • The maximum output current is 1A, but it's recommended to keep it below 0.8A for optimal performance and to prevent overheating.
  • Power dissipation (PD) can be calculated using the formula: PD = (VIN - VOUT) x IOUT, where VIN is the input voltage, VOUT is the output voltage, and IOUT is the output current.
  • The thermal resistance (θJA) of the BC858CDXV6T1G is 130°C/W, which means that for every watt of power dissipation, the junction temperature will increase by 130°C.

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BC858CDXV6T1G Overview

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Part Image BC858CDXV6T5 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon

Part Image BC858CDXV6T5G onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon