Description:For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC846...-BC850... (NPN)
• Pb-free (RoHS compliant) packag
Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. As a general guideline, Infineon recommends a gate resistor value between 1 ohm and 10 ohm. For more specific guidance, consult Infineon's application note AN2013-04 or contact their technical support.
The maximum allowed voltage for the bootstrap capacitor is typically limited by the capacitor's rating, but as a general rule, it should not exceed the maximum voltage rating of the MOSFET (in this case, 600V). It's essential to choose a capacitor with a suitable voltage rating and to ensure proper capacitor selection and layout to prevent overvoltage stress.
To ensure EMC, follow Infineon's guidelines for layout, component selection, and shielding. Implement proper filtering, decoupling, and grounding techniques. Additionally, consider using Infineon's EMC-optimized MOSFETs and follow the recommendations in their application note AN2013-05.
The recommended operating temperature range for the BC860BE6327HTSA1 is -40°C to 150°C. However, it's essential to consider the specific application and environmental conditions to ensure reliable operation within the specified temperature range.
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BC860BE6327HTSA1 Overview
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