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BCW66G-TP - MCC

Description: Small Signal Bipolar Transistors

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BCW66G-TP - MCC - PCB symbol
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PCB Footprints
BCW66G-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-ren20
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3D Models
BCW66G-TP - MCC - 3D model - SOT23 (3-Pin) - SOT-23-ren20
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BCW66G-TP Details

  • Manufacturer Part Number:

    BCW66G-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.8 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    110

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.2 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

BCW66G-TP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BCW66G-TP is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm lead pitch.
  • The BCW66G-TP is rated for operation up to 150°C, but it's recommended to derate the power dissipation above 125°C to ensure reliability and prevent thermal runaway.
  • To ensure linear operation, the BCW66G-TP should be biased with a collector-emitter voltage (Vce) between 2V and 10V, and a base-emitter voltage (Vbe) around 0.7V. The collector current (Ic) should be limited to the recommended maximum value to prevent overheating.
  • The BCW66G-TP has a transition frequency (fT) of around 3GHz, making it suitable for high-frequency applications up to several hundred MHz. However, the transistor's performance may degrade at higher frequencies due to internal capacitances and inductances.
  • Yes, the BCW66G-TP can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). A dedicated switch transistor or a MOSFET may be a better choice for switching applications.

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BCW66G-TP Overview

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