Part Image

BCW66GLT1G - onsemi

Description: S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Download BCW66GLT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BCW66GLT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom
3D Models
BCW66GLT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom

BCW66GLT1G Details

  • Manufacturer Part Number:

    BCW66GLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.8 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • Turn-off Time-Max (toff):

    400 ns

  • Turn-on Time-Max (ton):

    100 ns

BCW66GLT1G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage stress on the BCW66GLT1G is 1.5 times the maximum rated voltage (Vr) for a duration of up to 100 ms. Exceeding this limit may cause permanent damage to the device.
  • Use proper ESD handling procedures, such as grounding yourself and using an ESD wrist strap or mat. Ensure that the device is stored in an ESD-protective package or bag when not in use.
  • A soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 10-30 seconds is recommended. Avoid exceeding 280°C (536°F) to prevent damage to the device.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BCW66GLT1G Overview

Use the download button to access the BCW66GLT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BCW66, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to BCW66GLT1G

Showing 0 results

BCW66GLT1G Alternates

Showing results

Image Part Number Model
Part Image BCW66GTR13 Central Semiconductor Corp

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon

Part Image BCW66GBKLEADFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon

Part Image BCW66GTR13LEADFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon

Part Image BCW66GE6433 Infineon Technologies AG

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Part Image BCW66GTRLEADFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon

For a full list of alternate parts for BCW66GLT1G, check out Findchips.com