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BD681G - onsemi

Description: High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682; Monolithic Construction; BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803; Pb-Free Packages are Available

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PCB Footprints
BD681G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
BD681G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD681G Details

  • Manufacturer Part Number:

    BD681G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD681G Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD681G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A/100V.
  • To ensure linear operation, the BD681G should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V to 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • For optimal thermal performance, the BD681G should be mounted on a PCB with a large copper area for heat dissipation. A thermal pad or heat sink can be used to further improve heat dissipation. The device should be placed away from other heat sources and high-current paths.
  • While the BD681G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching frequency should be limited to around 100 kHz to avoid excessive power losses. Additionally, the base drive circuitry should be designed to minimize switching losses.
  • To protect the BD681G from ESD, it is recommended to use anti-static packaging, handling, and storage procedures. Additionally, ESD protection devices such as TVS diodes or ESD protection arrays can be used to protect the device from external ESD events.

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BD681G Overview

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BD681G Alternates

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Image Part Number Model
Part Image BD681G Rochester Electronics LLC

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

Part Image BD681 Rochester Electronics LLC

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

Part Image BD681S Rochester Electronics LLC

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-126

Part Image BD681 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD681S onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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