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BS170-D75Z - onsemi

Description: N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3

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BS170-D75Z - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR
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BS170-D75Z - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR
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BS170-D75Z Details

  • Manufacturer Part Number:

    BS170-D75Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BS170-D75Z Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BS170-D75Z is -55°C to 150°C.
  • To ensure stability, it's recommended to use a bypass capacitor (e.g., 100nF) between the drain and source pins, and to minimize the lead length and inductance of the drain and source connections.
  • The maximum SOA for the BS170-D75Z is defined by the boundaries of the drain-source voltage (Vds) and drain current (Id). Refer to the datasheet for the specific SOA graph.
  • Yes, the BS170-D75Z can be used as a switch in high-power applications, but ensure that the device is properly heatsinked and the maximum junction temperature (Tj) is not exceeded.
  • To protect the BS170-D75Z from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.

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BS170-D75Z Overview

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Part Image BS170/D29Z{L34Z} Texas Instruments

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Part Image BS170/D10Z Texas Instruments

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