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BS170G - onsemi

Description: Obsolete - Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω

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BS170G - onsemi PCB footprint - Other - Other - BS170G-1
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BS170G - onsemi  - 3D model - Other - BS170G-1
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BS170G Details

  • Manufacturer Part Number:

    BS170G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92 (TO-226) 5.33mm Body Height

  • Package Description:

    LEAD FREE, CASE 29-11, TO-92, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BS170G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BS170G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure the BS170G is properly biased for optimal performance, it's essential to follow the recommended biasing conditions outlined in the datasheet. This includes setting the base-emitter voltage (VBE) within the specified range, typically between 0.6V to 0.8V, and ensuring the collector-emitter voltage (VCE) is within the recommended operating range. Additionally, it's crucial to provide a stable power supply and minimize noise and oscillations in the circuit.
  • For optimal thermal performance and to minimize thermal resistance, it's recommended to use a PCB layout that provides a large copper area for heat dissipation. A minimum of 1 oz copper thickness is recommended, and the use of thermal vias can help to further reduce thermal resistance. Additionally, ensuring good airflow and using a heat sink or thermal interface material can help to improve thermal management.
  • To handle ESD protection for the BS170G, it's essential to follow proper handling and storage procedures to prevent electrostatic discharge (ESD) damage. This includes using ESD-safe materials, such as ESD-safe bags and trays, and ensuring that all personnel handling the devices are properly grounded. Additionally, incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design can help to protect the BS170G from ESD events.
  • The reliability and lifetime expectations for the BS170G are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. In general, the BS170G is designed to meet the reliability requirements of automotive and industrial applications, with a typical lifetime expectation of 10 to 15 years or more, depending on the specific application and operating conditions.

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BS170G Overview

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BS170G Alternates

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Image Part Number Model
Part Image BS170G Rochester Electronics LLC

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, LEAD FREE, CASE 29-11, TO-92, 3 PIN

Part Image BS170ZL1G Rochester Electronics LLC

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, LEAD FREE, CASE 29-11, TO-92, 3 PIN

Part Image BS170RLRA onsemi

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

Part Image BS170RLRAG onsemi

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

Part Image BS170 Advanced Microelectronic Products Inc

Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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