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BSB012NE2LX - Infineon

Description: N-Channel 25 V 37A (Ta), 170A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™ , -40°C ~ 150°C (TJ)

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BSB012NE2LX - Infineon PCB footprint - Other - Other - MG-WDSON-2_2025
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BSB012NE2LX - Infineon  - 3D model - Other - MG-WDSON-2_2025
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BSB012NE2LX Details

  • Manufacturer Part Number:

    BSB012NE2LX

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, METAL, WDSON-2

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    285 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    39 A

  • Drain-source On Resistance-Max:

    0.0012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-MBCC-N2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSB012NE2LX Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout and thermal management guide in their application note AN2014-01. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
  • The maximum allowed overcurrent is typically 2-3 times the rated current. To protect the IGBT, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism. Additionally, consider implementing overcurrent protection using an external monitoring IC or a dedicated overcurrent protection IC.
  • Follow the guidelines in the datasheet and application notes for recommended isolation and creepage distances. Ensure that the PCB layout and component placement meet the required clearances and distances to prevent electrical shock and ensure safe operation.
  • Store the IGBT module in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the pins or electrical contacts. Use anti-static wrist straps or mats when handling the module to prevent electrostatic discharge damage.

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