Part Image

BSC014N04LSIATMA1 - Infineon

Description: INFINEON - BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount

Download BSC014N04LSIATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC014N04LSIATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8 FL_H=1.10mm
click to zoom
3D Models
BSC014N04LSIATMA1 - Infineon  - 3D model - Other - PG-TDSON-8 FL_H=1.10mm
click to zoom

BSC014N04LSIATMA1 Details

  • Manufacturer Part Number:

    BSC014N04LSIATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    166 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    180 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    780 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSC014N04LSIATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BSC014N04LSIATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink, ensuring good airflow, and keeping the device away from other heat sources.
  • A recommended PCB layout for BSC014N04LSIATMA1 includes a solid ground plane, short and wide traces, and a heat sink attached to the device.
  • To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag.
  • The maximum current rating for BSC014N04LSIATMA1 is 14A.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC014N04LSIATMA1 Overview

Use the download button to access the BSC014N04LSIATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC01, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC014N04LSIATMA1

Showing 0 results

BSC014N04LSIATMA1 Alternates

Showing results

Image Part Number Model
Part Image BSC014N04LSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC014N04LS Infineon Technologies AG

Power Field-Effect Transistor, 170A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET