Part Image

BSC014N04LSTATMA1 - Infineon

Description: MOSFET TRENCH <= 40V

Download BSC014N04LSTATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC014N04LSTATMA1 - Infineon PCB footprint - Other - Other - TDSON-8 FL
click to zoom
3D Models
BSC014N04LSTATMA1 - Infineon  - 3D model - Other - TDSON-8 FL
click to zoom

BSC014N04LSTATMA1 Details

  • Manufacturer Part Number:

    BSC014N04LSTATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC014N04LSTATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC014N04LSTATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the BSC014N04LSTATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the BSC014N04LSTATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC014N04LSTATMA1 Overview

Use the download button to access the BSC014N04LSTATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC01, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC014N04LSTATMA1

Showing 0 results

BSC014N04LSTATMA1 Alternates

Showing results

Image Part Number Model
Part Image BSC014N04LSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC014N04LSIATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 166A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC014N04LS Infineon Technologies AG

Power Field-Effect Transistor, 170A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET