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BSC040N10NS5ATMA1 - Infineon

Description: MOSFET N-Ch 100V 100A TDSON-8 OptiMOSTM5Power-Transistor,100V

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BSC040N10NS5ATMA1 - Infineon - PCB symbol
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BSC040N10NS5ATMA1 - Infineon PCB footprint - Other - Other - BSC040N10NS5ATMA1-1
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BSC040N10NS5ATMA1 - Infineon - 3D model - Other - BSC040N10NS5ATMA1-1
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BSC040N10NS5ATMA1 Details

  • Manufacturer Part Number:

    BSC040N10NS5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC040N10NS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC040N10NS5ATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using thermal interface material.
  • The maximum current rating of the BSC040N10NS5ATMA1 is 40A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
  • To protect the BSC040N10NS5ATMA1 from overvoltage, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, ensure the device is operated within its specified voltage ratings.
  • The recommended gate drive voltage for the BSC040N10NS5ATMA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.

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BSC040N10NS5ATMA1 Overview

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