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BSC080N03MSGATMA1 - Infineon

Description: BSC080N03MSGATMA1 N-Channel MOSFET, 53 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon

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BSC080N03MSGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5
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BSC080N03MSGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5
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BSC080N03MSGATMA1 Details

  • Manufacturer Part Number:

    BSC080N03MSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    15 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0102 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    212 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC080N03MSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC080N03MSGATMA1 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • For optimal performance, use a PCB layout that minimizes the gate-source and drain-source loop areas, and ensures a low-inductance path for the drain current.
  • Yes, the BSC080N03MSGATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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Part Image BSC080N03MSG Infineon Technologies AG

Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET