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BSC082N10LSGATMA1 - Infineon

Description: BSC082N10LSGATMA1 N-Channel MOSFET, 100 A, 100 V OptiMOS 2, 8-Pin TDSON Infineon

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BSC082N10LSGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8
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BSC082N10LSGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8
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BSC082N10LSGATMA1 Details

  • Manufacturer Part Number:

    BSC082N10LSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    377 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13.8 A

  • Drain-source On Resistance-Max:

    0.0082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC082N10LSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC082N10LSGATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the BSC082N10LSGATMA1 is 15V, with a maximum of 20V.
  • Yes, the BSC082N10LSGATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment is grounded.

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Part Image BSC082N10LSG Infineon Technologies AG

Power Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET