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BSC0901NS - Infineon

Description: MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

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BSC0901NS - Infineon - PCB symbol
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BSC0901NS - Infineon PCB footprint - Other - Other - BSC0901NS-4
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BSC0901NS - Infineon - 3D model - Other - BSC0901NS-4
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BSC0901NS Details

  • Manufacturer Part Number:

    BSC0901NS

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    133 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0901NS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Use a shielded cable and connector, and ensure the PCB layout is designed to minimize electromagnetic radiation. Additionally, use a common-mode choke and a ferrite bead to filter out electromagnetic interference.
  • The maximum allowed voltage on the input pins is 35V, but it's recommended to keep it below 30V to ensure reliable operation and prevent damage to the device.
  • Use a logic analyzer or an oscilloscope to monitor the input and output signals. Check the power supply voltage, input signal integrity, and output load conditions. Consult the datasheet and application notes for troubleshooting guidelines.
  • The BSC0901NS is rated for operation up to 150°C, but the device's performance and reliability may degrade at high temperatures. Ensure proper heat sinking and thermal management to maintain a safe operating temperature.

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BSC0901NS Overview

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BSC0901NS Alternates

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Part Image BSC0901NSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET