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BSC117N08NS5 - Infineon

Description: N-Channel 80 V 49A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-7

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BSC117N08NS5 - Infineon PCB footprint - Other - Other - BSC117N08NS5-1
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BSC117N08NS5 - Infineon  - 3D model - Other - BSC117N08NS5-1
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BSC117N08NS5 Details

  • Manufacturer Part Number:

    BSC117N08NS5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    14 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0117 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    196 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC117N08NS5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC117N08NS5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 10 K/W. Additionally, the device should be mounted on a PCB with a thermal via structure to dissipate heat efficiently. It's also important to follow the recommended layout and thermal design guidelines provided in the datasheet.
  • The recommended gate drive voltage for the BSC117N08NS5 is between 10 V and 15 V. However, the device can tolerate gate drive voltages up to 20 V, but this may affect the device's reliability and performance.
  • To protect the BSC117N08NS5 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a TVS diode to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit excessive current. It's also important to follow the recommended layout and design guidelines provided in the datasheet.
  • The recommended PCB layout for the BSC117N08NS5 involves using a 4-layer PCB with a solid ground plane, a separate power plane, and a signal layer. The device should be placed near the power source, and the gate drive circuitry should be located close to the device. It's also important to follow the recommended layout and design guidelines provided in the datasheet.

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BSC117N08NS5 Overview

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