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BSD235N - Infineon

Description: Infineon BSD235N Dual N-channel MOSFET Transistor, 950 mA, 20 V, 6-Pin SOT-363

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PCB Footprints
BSD235N - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
BSD235N - Infineon  - 3D model - SOT23 (6-Pin) - SOT-363
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BSD235N Details

  • Manufacturer Part Number:

    BSD235N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.9

  • Additional Feature:

    AVALANCHE RATED

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.95 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

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BSD235N Overview

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Image Part Number Model
Part Image BSD235NH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET