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BSD840NH6327XTSA1 - Infineon

Description: Infineon BSD840NH6327XTSA1 Dual N-channel MOSFET, 880 mA, 20 V OptiMOS 2, 6-Pin SOT-363

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BSD840NH6327XTSA1 - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363_Infineon
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BSD840NH6327XTSA1 - Infineon  - 3D model - SOT23 (6-Pin) - SOT-363_Infineon
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BSD840NH6327XTSA1 Details

  • Manufacturer Part Number:

    BSD840NH6327XTSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    6

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSD840NH6327XTSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSD840NH6327XTSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device.
  • The device requires a specific power-up sequence: VCC, then VGS, and finally VIN. Ensure that the power supplies are ramped up slowly (≤ 10 ms) to prevent damage.
  • The device is sensitive to ESD. Handle the device with ESD-protective equipment, and ensure that the PCB design includes ESD protection diodes and resistors.

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BSD840NH6327XTSA1 Overview

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Part Image BSD840NH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET