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BSH114,215 - Nexperia

Description: NXP BSH114,215 N-channel MOSFET Transistor, 0.85 A, 100 V, 3-Pin TO-236AB

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BSH114,215 - Nexperia PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23-ren2
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3D Models
BSH114,215 - Nexperia  - 3D model - SOT23 (3-Pin) - SOT23-ren2
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BSH114,215 Details

  • Manufacturer Part Number:

    BSH114,215

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-236

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT23

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.85 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSH114,215 Frequently Asked Questions (FAQs)

  • A good PCB layout for the BSH114,215 should include a large copper area for heat dissipation, with multiple vias connecting the thermal pad to the copper plane. This helps to reduce thermal resistance and improve overall thermal performance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation, and ensure good airflow around the device.
  • Exceeding the maximum junction temperature (Tj) can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • While the BSH114,215 is designed to operate in a variety of environments, high humidity can still affect its performance and reliability. To mitigate this, consider using a conformal coating or potting the device to protect it from moisture, and ensure good airflow to prevent condensation.
  • To troubleshoot issues with the BSH114,215, start by verifying the device's operating conditions, including voltage, current, and temperature. Check for any signs of physical damage, and use tools like oscilloscopes or logic analyzers to diagnose issues with the device's output.

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BSH114,215 Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Image Part Number Model
Part Image 934056506215 NXP Semiconductors

Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH114,215 NXP Semiconductors

Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image 934056506215 Nexperia

Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH114 Nexperia

Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH114TRL NXP Semiconductors

Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for BSH114,215, check out Findchips.com