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BSM25GD120DN2 - Infineon

Description: Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm

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Symbol
BSM25GD120DN2 - Infineon - PCB symbol
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PCB Footprints
BSM25GD120DN2 - Infineon PCB footprint - Other - Other - ECONOPACK 2
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3D Models
BSM25GD120DN2 - Infineon - 3D model - Other - ECONOPACK 2
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BSM25GD120DN2 Details

  • Manufacturer Part Number:

    BSM25GD120DN2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    17

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    35 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X17

  • Number of Elements:

    6

  • Number of Terminals:

    17

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    140 ns

  • VCEsat-Max:

    3.2 V

BSM25GD120DN2 Frequently Asked Questions (FAQs)

  • The maximum allowed overcurrent for the IGBT is typically 2-3 times the nominal current rating, but it's recommended to consult the application note or contact Infineon support for specific guidance.
  • Proper thermal management involves ensuring good heat sink contact, using thermal interface materials, and maintaining a clean and dust-free environment. The module's thermal resistance (Rth) should also be considered in the design.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a resistor value between 10 ohms to 100 ohms, but it's recommended to consult the application note or contact Infineon support for specific guidance.
  • Yes, the BSM25GD120DN2 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of electrical characteristics and thermal performance. It's recommended to consult the application note or contact Infineon support for specific guidance.
  • The maximum allowed voltage transient for the IGBT is typically 1.5 to 2 times the nominal voltage rating, but it's recommended to consult the application note or contact Infineon support for specific guidance.

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BSM25GD120DN2 Overview

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