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BSM35GD120DN2 - Infineon

Description: IGBT Module NPT Three Phase Inverter 1200 V 50 A 280 W Chassis Mount Module

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BSM35GD120DN2 - Infineon  - 3D model
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BSM35GD120DN2 Details

  • Manufacturer Part Number:

    BSM35GD120DN2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    17

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X17

  • Number of Elements:

    6

  • Number of Terminals:

    17

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    120 ns

  • VCEsat-Max:

    3.2 V

BSM35GD120DN2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSM35GD120DN2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistance for the BSM35GD120DN2 is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation of the IGBT.
  • Yes, the BSM35GD120DN2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drives are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the BSM35GD120DN2 is 1200 V, as specified in the datasheet. Exceeding this value may damage the device.

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BSM35GD120DN2 Overview

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