SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
400 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
450 ns
Turn-on Time-Nom (ton):
100 ns
VCEsat-Max:
3.2 V
BSM50GB120DN2 Frequently Asked Questions (FAQs)
The maximum allowed overcurrent for the BSM50GB120DN2 is 2.5 times the nominal current (IC) for a maximum of 10ms, according to the datasheet.
To ensure proper application of the thermal interface material (TIM), follow the manufacturer's instructions and apply a thin, even layer to the base plate. Ensure the TIM is within its shelf life and has not been contaminated.
The recommended gate resistor value for the BSM50GB120DN2 is between 10 ohms and 20 ohms, depending on the specific application and switching frequency.
Yes, the BSM50GB120DN2 can be used in a parallel configuration, but it's essential to ensure that the modules are matched and the gate drive circuits are synchronized to prevent uneven current sharing.
The maximum allowed voltage imbalance between the DC-link capacitors when using the BSM50GB120DN2 is 10% of the nominal DC-link voltage.
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BSM50GB120DN2 Overview
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