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BSM50GD120DN2 - Infineon

Description: IGBT 3ph Full-Bridge 1200V 72A ECONOPACK Infineon, BSM50GD120DN2, IGBT Module, Hex, 50 A max, 1200 V, 17-Pin EconoPACK2

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BSM50GD120DN2 - Infineon PCB footprint - Other - Other - ECONOPACK 2K
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BSM50GD120DN2 - Infineon  - 3D model - Other - ECONOPACK 2K
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BSM50GD120DN2 Details

  • Manufacturer Part Number:

    BSM50GD120DN2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    17

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    72 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X17

  • Number of Elements:

    6

  • Number of Terminals:

    17

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    350 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    100 ns

  • VCEsat-Max:

    3.2 V

BSM50GD120DN2 Frequently Asked Questions (FAQs)

  • The maximum allowed overcurrent for the BSM50GD120DN2 is 2.5 times the nominal current (IC) for a maximum of 10ms, according to the datasheet.
  • To ensure proper thermal management, ensure a good thermal interface between the module and the heat sink, use a suitable thermal interface material, and maintain a maximum junction temperature (Tj) of 150°C.
  • The recommended gate resistor value for the BSM50GD120DN2 is between 10Ω and 20Ω, depending on the specific application and switching frequency.
  • Yes, the BSM50GD120DN2 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the parallel modules.
  • The maximum allowed voltage imbalance between the DC links in a 3-phase inverter application is ±10% of the nominal DC link voltage, according to the datasheet.

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Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel