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BSM50GP120 - Infineon

Description: IGBT Modules 1200V 50A PIM

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BSM50GP120 - Infineon  - 3D model
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BSM50GP120 Details

  • Manufacturer Part Number:

    BSM50GP120

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    35

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X35

  • Number of Elements:

    7

  • Number of Terminals:

    35

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    430 ns

  • Turn-on Time-Nom (ton):

    105 ns

  • VCEsat-Max:

    2.55 V

BSM50GP120 Frequently Asked Questions (FAQs)

  • The maximum allowed voltage imbalance between the DC links is ±10% of the nominal DC voltage. Exceeding this limit can lead to uneven current sharing and reduced module lifetime.
  • Proper thermal management involves ensuring good heat sink contact, using a suitable thermal interface material, and maintaining a maximum junction temperature of 150°C. Forced air cooling or liquid cooling can also be used to enhance heat dissipation.
  • The recommended gate resistor value is between 10 Ω and 20 Ω. A higher value can lead to slower switching times, while a lower value can cause oscillations and EMI issues.
  • Yes, the BSM50GP120 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of electrical characteristics and thermal performance. Additionally, a master-slave configuration is recommended to prevent shoot-through currents.
  • The maximum allowed dv/dt for the BSM50GP120 is 5 kV/μs. Exceeding this limit can lead to voltage overshoots and reduced module lifetime.

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