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BSP295 - Infineon

Description: MOSFET N-Channel 60V 1.8A SOT223 Infineon BSP295 N-channel MOSFET Transistor, 1.8 A, 60 V, 4-Pin SOT-223

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PCB Footprints
BSP295 - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - PG-SOT223-4-21
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BSP295 - Infineon  - 3D model - SOT223 (3-Pin) - PG-SOT223-4-21
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BSP295 Details

  • Manufacturer Part Number:

    BSP295

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    7.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSP295 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the BSP295 is 4.5V to 18V.
  • To ensure stability, it's essential to follow the recommended layout and component selection guidelines, including the use of a suitable output capacitor and a low-ESR input capacitor.
  • The maximum output current of the BSP295 is 1A, but it's recommended to limit the output current to 0.5A for optimal performance and reliability.
  • To prevent overheating, ensure good thermal design, including a suitable heat sink and adequate airflow. Also, follow the recommended operating conditions and avoid exceeding the maximum junction temperature of 150°C.
  • Yes, the BSP295 is rated for operation up to 125°C, but it's essential to follow the recommended derating guidelines for high-temperature operation to ensure reliability.

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BSP295 Overview

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BSP295 Alternates

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Image Part Number Model
Part Image BSP295E6327 Siemens

Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Image BSP295E-6327 Siemens

1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Image BSP295L6327HTSA1 Infineon Technologies AG

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Image BSP295E-6327 Infineon Technologies AG

1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Image BSP295L6327XT Infineon Technologies AG

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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