Part Image

BSP373NH6327XTSA1 - Infineon

Description: MOSFETs N-Ch 100V 1.8A SOT-223-3

Download BSP373NH6327XTSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSP373NH6327XTSA1 - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223
click to zoom
3D Models
BSP373NH6327XTSA1 - Infineon  - 3D model - SOT223 (3-Pin) - SOT223
click to zoom

BSP373NH6327XTSA1 Details

  • Manufacturer Part Number:

    BSP373NH6327XTSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    33 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    21 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.8 W

  • Pulsed Drain Current-Max (IDM):

    7.3 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    53.2 ns

  • Turn-on Time-Max (ton):

    15.81 ns

BSP373NH6327XTSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating of at least 15V to ensure proper switching of the IGBT. The TLE7180EF or TLE7181EF gate drivers from Infineon are suitable options.
  • The maximum allowed overcurrent is 2x the nominal current (Ic) for a maximum of 10ms. To protect the module, use a fast-acting fuse or a current limiter, and consider adding overcurrent detection and shutdown circuitry.
  • Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Apply a thin layer of thermal interface material and secure the heat sink with screws or clips.
  • Store the modules in their original packaging, away from direct sunlight and moisture. Handle the modules by the edges to prevent electrostatic discharge, and avoid bending or flexing the module.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSP373NH6327XTSA1 Overview

Use the download button to access the BSP373NH6327XTSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSP37, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSP373NH6327XTSA1

Showing 0 results

BSP373NH6327XTSA1 Alternates

Showing results

Image Part Number Model
Part Image BSP373NH6327 Infineon Technologies AG

Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSP373N Infineon Technologies AG

Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET