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BSS123NH6327XTSA1 - Infineon

Description: MOSFET N-Ch 100V 190mA SOT-23-3

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PCB Footprints
BSS123NH6327XTSA1 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23
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3D Models
BSS123NH6327XTSA1 - Infineon  - 3D model - SOT23 (3-Pin) - SOT-23
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BSS123NH6327XTSA1 Details

  • Manufacturer Part Number:

    BSS123NH6327XTSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.19 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.1 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

BSS123NH6327XTSA1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, and to use thermal vias to dissipate heat. It's also recommended to have a solid ground plane on the bottom layer to help with heat dissipation.
  • To ensure the device is properly biased, make sure to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes setting the correct voltage and current levels, as well as ensuring the device is properly terminated.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased reliability, and potentially even device failure. It's essential to ensure the device is operated within the recommended temperature range to ensure optimal performance and longevity.
  • To troubleshoot issues with the device, start by reviewing the datasheet and application notes to ensure the device is being used correctly. Check for proper biasing, termination, and PCB layout. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue. If the problem persists, contact Infineon's technical support for further assistance.
  • Yes, it's essential to take proper ESD protection measures when handling the device to prevent damage. This includes using an ESD wrist strap, ESD mat, and ESD-safe packaging and storage materials. Ensure that all equipment and tools used to handle the device are also ESD-safe.

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BSS123NH6327XTSA1 Overview

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Part Image BSS123NH6433XTMA1 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS123NH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET