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BSS131H6327XT - Infineon

Description: Infineon,Trans BSS131H6327XT Infineon BSS131H6327XT N-channel MOSFET Transistor, 0.11 A, 240 V, 3-Pin SOT-23

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BSS131H6327XT - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23-ren1
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BSS131H6327XT - Infineon  - 3D model - SOT23 (3-Pin) - SOT23-ren1
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BSS131H6327XT Details

  • Manufacturer Part Number:

    BSS131H6327XT

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    240 V

  • Drain Current-Max (ID):

    0.11 A

  • Drain-source On Resistance-Max:

    14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.2 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.36 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

BSS131H6327XT Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the exposed pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Also, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.
  • Critical timing parameters to consider include the rise and fall times, propagation delay, and pulse width distortion. These parameters can affect the overall system performance and should be carefully considered during design.
  • To handle ESD protection, ensure that the device is handled and stored in an ESD-safe environment. During PCB design, consider adding ESD protection diodes or resistors to protect the device from electrostatic discharge.
  • Thermal management considerations include ensuring good airflow around the device, using a heat sink if necessary, and avoiding thermal hotspots on the PCB. The device's thermal resistance and power dissipation should also be considered during design.

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BSS131H6327XT Overview

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