Part Image

BSS138NH6327XTSA2 - Infineon

Description: Infineon BSS138NH6327XTSA2 N-channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23

Download BSS138NH6327XTSA2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSS138NH6327XTSA2 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - PG-SOT-23
click to zoom

BSS138NH6327XTSA2 Details

  • Manufacturer Part Number:

    BSS138NH6327XTSA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.23 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.8 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.36 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Reference Standard:

    AEC-Q101; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

BSS138NH6327XTSA2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSS138NH6327XTSA2 is a 3-pin SOT23 package with a pitch of 0.95 mm and a pad size of 1.3 mm x 1.3 mm.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
  • The maximum allowed power dissipation for the BSS138NH6327XTSA2 is 1.4 W at an ambient temperature of 25°C, and it decreases with increasing temperature.
  • Yes, the BSS138NH6327XTSA2 can be used as a switch in high-frequency applications up to 1 GHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the BSS138NH6327XTSA2 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSS138NH6327XTSA2 Overview

Use the download button to access the BSS138NH6327XTSA2 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like BSS13, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to BSS138NH6327XTSA2

Showing 0 results

BSS138NH6327XTSA2 Alternates

Showing results

Image Part Number Model
Part Image BSS138NH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138N Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138NL6433XT Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138NL6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138NL6433 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for BSS138NH6327XTSA2, check out Findchips.com