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BSS314PEH6327XTSA1 - Infineon

Description: MOSFET P-Ch -30V -1.5A SOT-23-3

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BSS314PEH6327XTSA1 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - BSS314PEH6327XTSA1-1
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BSS314PEH6327XTSA1 - Infineon  - 3D model - SOT23 (3-Pin) - BSS314PEH6327XTSA1-1
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BSS314PEH6327XTSA1 Details

  • Manufacturer Part Number:

    BSS314PEH6327XTSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSS314PEH6327XTSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to keep the device temperature within the specified range.
  • The BSS314PEH6327XTSA1 has built-in ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and handling. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the BSS314PEH6327XTSA1 is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that you follow the recommended operating conditions and guidelines for these applications.
  • Start by reviewing the datasheet and application notes for proper usage and configuration. Check for proper power supply, signal integrity, and thermal management. Use oscilloscopes or logic analyzers to debug signal issues. If issues persist, contact Infineon's technical support for further assistance.

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BSS314PEH6327XTSA1 Overview

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Part Image BSS314PEH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET