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BSS4130AT116 - ROHM Semiconductor

Description: NPN, SOT-23, 30V 1A, General Purpose Amplification Transistor

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BSS4130AT116 - ROHM Semiconductor PCB footprint - Other - Other - SOT-23(SST3)-+-
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BSS4130AT116 - ROHM Semiconductor  - 3D model - Other - SOT-23(SST3)-+-
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BSS4130AT116 Details

  • Manufacturer Part Number:

    BSS4130AT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-05-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    1 A

  • Collector-Base Capacitance-Max:

    5 pF

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    90

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    400 MHz

  • VCEsat-Max:

    0.32 V

BSS4130AT116 Frequently Asked Questions (FAQs)

  • ROHM provides a recommended PCB layout in their application note AN191, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize EMI.
  • To ensure reliability in high-temperature applications, follow ROHM's recommended derating guidelines for junction temperature, and consider using a heat sink or thermal interface material to reduce thermal resistance. Additionally, ensure that the device is operated within its specified maximum junction temperature (Tj) of 150°C.
  • The maximum allowable voltage for the gate-source voltage (Vgs) of BSS4130AT116 is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • To protect BSS4130AT116 from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, consider adding ESD protection devices, such as TVS diodes, to the circuit design.
  • The recommended gate drive voltage for BSS4130AT116 is typically between 4.5V to 15V, depending on the specific application requirements. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

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