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BSS63AHZGT116 - ROHM Semiconductor

Description: Bipolar Transistors - BJT BSS63AHZG is a SOT-23 package Transistor for high voltage amplifier. This is a high-reliability product of automotive grade qualified to AEC-Q101.

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BSS63AHZGT116 - ROHM Semiconductor - PCB symbol
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PCB Footprints
BSS63AHZGT116 - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (SST3)
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3D Models
BSS63AHZGT116 - ROHM Semiconductor - 3D model - SOT23 (3-Pin) - SOT-23 (SST3)
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BSS63AHZGT116 Details

  • Manufacturer Part Number:

    BSS63AHZGT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-05-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    5 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.35 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.5 V

BSS63AHZGT116 Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The BSS63AHZGT116 requires a bias voltage of 2.5V to 5.5V on the gate pin (G) with respect to the source pin (S). Ensure the bias voltage is within this range and the gate current is limited to 10mA to prevent damage.
  • The maximum allowed power dissipation for the BSS63AHZGT116 is 1.5W. Ensure the device is operated within this limit to prevent overheating and damage.
  • Yes, the BSS63AHZGT116 is suitable for high-frequency switching applications up to 100kHz. However, ensure the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize losses and ringing.
  • ROHM recommends using ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to prevent damage from electrostatic discharge. Handle the device with care and use an ESD wrist strap or mat during assembly.

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BSS63AHZGT116 Overview

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