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BSS670T116 - ROHM Semiconductor

Description: Nch 60V 650mA, SOT-23, Small Signal MOSFET

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BSS670T116 - ROHM Semiconductor  - 3D model
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BSS670T116 Details

  • Manufacturer Part Number:

    BSS670T116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    650 A

  • Drain-source On Resistance-Max:

    0.81 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSS670T116 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • To ensure stable operation with high-frequency switching, it's essential to minimize parasitic inductance and capacitance in the PCB layout. Use short, wide traces for the high-frequency signals, and place the device close to the power source. Additionally, use a low-ESR capacitor for decoupling and consider adding a ferrite bead or a common-mode choke to filter out high-frequency noise.
  • Although the datasheet doesn't specify a maximum gate voltage, ROHM recommends keeping it below 20V to prevent damage to the internal gate oxide. Exceeding this voltage may lead to device degradation or failure.
  • To protect the BSS670T116 from overvoltage and overcurrent conditions, consider adding a voltage clamp or a TVS diode on the drain-source pins. Additionally, use a current sense resistor and a comparator or a dedicated overcurrent protection IC to detect and respond to overcurrent conditions.
  • ROHM recommends using a gate driver IC or a dedicated driver circuit with a low output impedance to ensure fast switching times and minimize ringing. The driver circuit should be capable of providing a peak current of at least 1A to ensure reliable switching.

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