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BSZ014NE2LS5IFATMA1 - Infineon

Description: INFINEON - BSZ014NE2LS5IFATMA1 - MOSFET Transistor, N Channel, 40 A, 25 V, 0.00125 ohm, 10 V, 2 V

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PCB Footprints
BSZ014NE2LS5IFATMA1 - Infineon PCB footprint - Other - Other - TSDSON-8 (fused leads)
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3D Models
BSZ014NE2LS5IFATMA1 - Infineon  - 3D model - Other - TSDSON-8 (fused leads)
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BSZ014NE2LS5IFATMA1 Details

  • Manufacturer Part Number:

    BSZ014NE2LS5IFATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.0021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ014NE2LS5IFATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider using a heat sink or fan for additional cooling.
  • The critical parameters to monitor for fault detection and protection include over-temperature, over-current, and under-voltage conditions. Implementing a monitoring circuit or using a dedicated fault detection IC can help detect these conditions and prevent damage to the device.
  • To optimize the gate driver circuit for efficient switching, ensure that the gate driver IC is properly selected, the gate resistance is minimized, and the PCB layout is optimized for low inductance and high-frequency signal integrity.
  • The recommended ESD protection measures for this device include using ESD protection diodes, following proper handling and storage procedures, and implementing ESD protection circuits in the system design.

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BSZ014NE2LS5IFATMA1 Overview

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