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BSZ034N04LSATMA1 - Infineon

Description: MOSFET TRENCH <= 40V

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PCB Footprints
BSZ034N04LSATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8-U03_2023
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3D Models
BSZ034N04LSATMA1 - Infineon  - 3D model - Other - PG-TSDSON-8-U03_2023
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BSZ034N04LSATMA1 Details

  • Manufacturer Part Number:

    BSZ034N04LSATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ034N04LSATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ034N04LSATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified range of 30V to 40V.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The MOSFET should be placed near a thermal via to dissipate heat efficiently.
  • To protect the MOSFET from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage.
  • The maximum current rating for the BSZ034N04LSATMA1 is 34A, but this can be affected by the operating temperature and other factors, so it's essential to consult the datasheet and application notes for specific guidance.

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BSZ034N04LSATMA1 Overview

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