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BSZ0506NSATMA1 - Infineon

Description: BSZ0506NSATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 5, 8-Pin TSDSON Infineon

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BSZ0506NSATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ0506NSATMA1 - Infineon PCB footprint - Other - Other - TSDSON-8FL
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BSZ0506NSATMA1 - Infineon - 3D model - Other - TSDSON-8FL
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BSZ0506NSATMA1 Details

  • Manufacturer Part Number:

    BSZ0506NSATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0506NSATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to filter out noise and ensure a stable voltage supply.
  • The maximum allowed power dissipation for the BSZ0506NSATMA1 is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The BSZ0506NSATMA1 is rated for operation up to 150°C. However, the device's performance and lifespan may be affected at high temperatures. It's recommended to derate the device's power dissipation and ensure proper cooling in high-temperature environments.
  • The BSZ0506NSATMA1 is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage.

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BSZ0506NSATMA1 Overview

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Part Image BSZ0506NS Infineon Technologies AG

Power Field-Effect Transistor, 15A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET