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BSZ086P03NS3EG - Infineon

Description: Infineon BSZ086P03NS3EG P-channel MOSFET Transistor, 40 A, -30 V, 8-Pin TSDSON

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BSZ086P03NS3EG Details

  • Manufacturer Part Number:

    BSZ086P03NS3EG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    ESD PROTECTED

  • Avalanche Energy Rating (Eas):

    105 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.0134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ086P03NS3EG Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • The gate resistor value depends on the specific application and switching frequency. As a general guideline, Infineon recommends a gate resistor value between 1 ohm and 10 ohm. A higher value can reduce EMI, but may increase switching losses. Consult the datasheet and application notes for more information.
  • The maximum allowed junction temperature for the BSZ086P03NS3EG is 150°C. Exceeding this temperature can reduce the device's lifetime and reliability.
  • Yes, the BSZ086P03NS3EG is qualified according to AEC-Q101, which makes it suitable for automotive and high-reliability applications. However, it's essential to consult the datasheet and relevant application notes to ensure the device meets the specific requirements of your application.
  • Follow the recommended soldering and mounting guidelines provided in the datasheet and Infineon's application note AN2013-03. Proper soldering and mounting techniques are crucial to ensure the device's reliability and performance.

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BSZ086P03NS3EG Overview

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