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BSZ086P03NS3GATMA1 - Infineon

Description: MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3

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BSZ086P03NS3GATMA1 - Infineon - PCB symbol
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BSZ086P03NS3GATMA1 - Infineon PCB footprint - Other - Other - BSZ086P03NS3GATMA1-2
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BSZ086P03NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ086P03NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    105 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.0134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ086P03NS3GATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSZ086P03NS3GATMA1 is a 3-pin TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 5mm x 5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK should be used to fill the gap between the device and the heat sink.
  • The maximum allowed power dissipation for the BSZ086P03NS3GATMA1 is 150W, assuming a junction temperature of 150°C and a thermal resistance of 1.5°C/W.
  • To protect the BSZ086P03NS3GATMA1 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used to limit the voltage to the maximum rated value of 30V. Additionally, a current sense resistor and a fuse can be used to detect and interrupt overcurrent conditions.
  • The recommended gate drive voltage for the BSZ086P03NS3GATMA1 is between 10V and 15V, with a maximum gate current of 1A.

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BSZ086P03NS3GATMA1 Overview

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Part Image BSZ086P03NS3EGXT Infineon Technologies AG

Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET